VBsemi Electronics Co. Ltd. Transistors SUD09P10-195-GE3-VB

Description
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - SUD09P10-195-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - SUD09P10-195-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SUD09P10-195-GE3-VB
Transistors SUD09P10-195-GE3-VB
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SUD09P10-195-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR
2N3904TAR
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015L - Qorvo
Qorvo
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
QPD1015L
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
3 suppliers
IGBT - 192352301 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200L-060
Specs
Transistor Type IGBT
View Details
CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND - CSD88539NDT - Texas Instruments
Texas Instruments
CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND
CSD88539NDT
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SO-8
View Details
7 suppliers