VBsemi Electronics Co. Ltd. Transistors SSD12P10-VB

Description
100V 8.8A 32.1W 250mΩ@10V,3.6A 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
  • Transistors - SSD12P10-VB - ODG (Origin Data Global)
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Description
100V 8.8A 32.1W 250mΩ@10V,3.6A 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
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Transistors - SSD12P10-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SSD12P10-VB
Transistors SSD12P10-VB
100V 8.8A 32.1W 250mΩ@10V,3.6A 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

100V 8.8A 32.1W 250mΩ@10V,3.6A 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SSD12P10-VB
Product Name Transistors
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