VBsemi Electronics Co. Ltd. Transistors SPP11N80C3-VB

Description
800V 12A 370mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
  • Transistors - SPP11N80C3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
800V 12A 370mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - SPP11N80C3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SPP11N80C3-VB
Transistors SPP11N80C3-VB
800V 12A 370mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

800V 12A 370mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SPP11N80C3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1658329 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1658329
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT323; Sot-323 (sc-70)
View Details
- LM25101CMA/NOPB - Rochester Electronics
Texas Instruments
LM25101CMA/NOPB
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1 - AIMBG120R010M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1
AIMBG120R010M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details