VBsemi Electronics Co. Ltd. Transistors SPD50P03LG-VB

Description
30V 60A 11mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - SPD50P03LG-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 60A 11mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SPD50P03LG-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SPD50P03LG-VB
Transistors SPD50P03LG-VB
30V 60A 11mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 60A 11mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SPD50P03LG-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Bipolar Transistor
2SK1101
Specs
Transistor Type Bipolar RF
View Details
2-input OR gate - 74HC1G32GZYL - Nexperia B.V.
Nexperia B.V.
2-input OR gate
74HC1G32GZYL
Specs
Package Type SOT8065-1 SOT8065-1
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H - AIMDQ75R016M2H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H
AIMDQ75R016M2H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
502A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E502
Specs
Transistor Type IGBT
View Details