VBsemi Electronics Co. Ltd. Transistors SPB07N60C3-VB

Description
650V 800mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - SPB07N60C3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
650V 800mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SPB07N60C3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SPB07N60C3-VB
Transistors SPB07N60C3-VB
650V 800mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

650V 800mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SPB07N60C3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor - T1G4004532-FL - Qorvo
Qorvo
DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor
T1G4004532-FL
Specs
Transistor Technology / Material GaN
Package Type NI-360
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1773E-TL-E - 855060-2SA1773E-TL-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1773E-TL-E
2SA1773E-TL-E
Specs
Package Type SOT3
View Details
Bipolar Transistors - 1460482 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1460482
Specs
Transistor Type BJT
Polarity NPN
Package Type Sot-89
View Details
Transistor - 32468886 - Radwell International
Fuji Electric Corp. of America
Transistor
2SK1518
View Details