VBsemi Electronics Co. Ltd. Transistors SIS412DN-T1-GE3-VB

Description
30V 18A 21mΩ@10V 1 N-Channel DFN-8(3x3) MOSFETs ROHS
  • Transistors - SIS412DN-T1-GE3-VB - ODG (Origin Data Global)
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Description
30V 18A 21mΩ@10V 1 N-Channel DFN-8(3x3) MOSFETs ROHS
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Transistors - SIS412DN-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SIS412DN-T1-GE3-VB
Transistors SIS412DN-T1-GE3-VB
30V 18A 21mΩ@10V 1 N-Channel DFN-8(3x3) MOSFETs ROHS

30V 18A 21mΩ@10V 1 N-Channel DFN-8(3x3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SIS412DN-T1-GE3-VB
Product Name Transistors
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