VBsemi Electronics Co. Ltd. Transistors SIR802DP-T1-GE3-VB

Description
30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1 N-Channel PDFN-8(5x6) MOSFETs ROHS
  • Transistors - SIR802DP-T1-GE3-VB - ODG (Origin Data Global)
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Description
30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1 N-Channel PDFN-8(5x6) MOSFETs ROHS
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Transistors - SIR802DP-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SIR802DP-T1-GE3-VB
Transistors SIR802DP-T1-GE3-VB
30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1 N-Channel PDFN-8(5x6) MOSFETs ROHS

30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1 N-Channel PDFN-8(5x6) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SIR802DP-T1-GE3-VB
Product Name Transistors
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