VBsemi Electronics Co. Ltd. Transistors SiHG11N80E-VB

Description
800V 15A 370mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
  • Transistors - SiHG11N80E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
800V 15A 370mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS

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Transistors - SiHG11N80E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHG11N80E-VB
Transistors SiHG11N80E-VB
800V 15A 370mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS

800V 15A 370mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SiHG11N80E-VB
Product Name Transistors
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