VBsemi Electronics Co. Ltd. Transistors SiHB6N65E-VB

Description
650V 8A 540mΩ@10V 5V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - SiHB6N65E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
650V 8A 540mΩ@10V 5V 1 N-Channel TO-263 MOSFETs ROHS

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Transistors - SiHB6N65E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHB6N65E-VB
Transistors SiHB6N65E-VB
650V 8A 540mΩ@10V 5V 1 N-Channel TO-263 MOSFETs ROHS

650V 8A 540mΩ@10V 5V 1 N-Channel TO-263 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SiHB6N65E-VB
Product Name Transistors
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