VBsemi Electronics Co. Ltd. Transistors SIA906EDJ-T1-GE3-VB

Description
30V 5.8A 22mΩ@10V 2 N-Channel DFN-8(3x3) MOSFETs ROHS
  • Transistors - SIA906EDJ-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 5.8A 22mΩ@10V 2 N-Channel DFN-8(3x3) MOSFETs ROHS

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Transistors - SIA906EDJ-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SIA906EDJ-T1-GE3-VB
Transistors SIA906EDJ-T1-GE3-VB
30V 5.8A 22mΩ@10V 2 N-Channel DFN-8(3x3) MOSFETs ROHS

30V 5.8A 22mΩ@10V 2 N-Channel DFN-8(3x3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SIA906EDJ-T1-GE3-VB
Product Name Transistors
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