VBsemi Electronics Co. Ltd. Transistors SIA400EDJ-T1-GE3-VB

Description
30V 1 N-Channel QFN-6(2x2) MOSFETs ROHS
  • Transistors - SIA400EDJ-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 1 N-Channel QFN-6(2x2) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - SIA400EDJ-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SIA400EDJ-T1-GE3-VB
Transistors SIA400EDJ-T1-GE3-VB
30V 1 N-Channel QFN-6(2x2) MOSFETs ROHS

30V 1 N-Channel QFN-6(2x2) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SIA400EDJ-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD210800SCL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR
ALD210800SCL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC16
View Details
4 suppliers
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor - QPD1035L - Qorvo
Qorvo
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
QPD1035L
Specs
Transistor Technology / Material DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
Package Type Flanged
Transistor Grade / Operating Range Military
View Details
2 suppliers
590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
590A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E590
Specs
Transistor Type IGBT
View Details
Bipolar Transistors - 1219949 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1219949
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT23; Sot-23
View Details