VBsemi Electronics Co. Ltd. Transistors SI3481DV-T1-GE3-VB

Description
SOT-23-6 MOSFETs ROHS
  • Transistors - SI3481DV-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
SOT-23-6 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SI3481DV-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI3481DV-T1-GE3-VB
Transistors SI3481DV-T1-GE3-VB
SOT-23-6 MOSFETs ROHS

SOT-23-6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI3481DV-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1690612 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1690612
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT223; Sot-223
View Details
60 V, N-channel Trench MOSFET - 2N7002AKM-QYL - Nexperia B.V.
Nexperia B.V.
60 V, N-channel Trench MOSFET
2N7002AKM-QYL
Specs
Transistor Type MOSFET
Package Type SOT883 SOT883
View Details
2 suppliers
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die - QPD2160D - Qorvo
Qorvo
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
QPD2160D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
EVICES, INC. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110902SAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
EVICES, INC. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY
ALD110902SAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers