VBsemi Electronics Co. Ltd. Transistors SI2319DS-T1-GE3-VB

Description
30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
  • Transistors - SI2319DS-T1-GE3-VB - ODG (Origin Data Global)
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Description
30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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Transistors - SI2319DS-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI2319DS-T1-GE3-VB
Transistors SI2319DS-T1-GE3-VB
30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS

30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2319DS-T1-GE3-VB
Triode/MOS Tube/Transistor >> MOSFETs SI2319DS-T1-GE3-VB
30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA P Channel SOT-23 MOSFETs ROHS

30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2319DS-T1-GE3-VB SI2319DS-T1-GE3-VB
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 30 volts
VGS(off) 2 volts
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