VBsemi Electronics Co. Ltd. Transistors RU30L15H-VB

Description
30V 11.6A 11mΩ@10V,10A 5.6W 3V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS
  • Transistors - RU30L15H-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 11.6A 11mΩ@10V,10A 5.6W 3V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - RU30L15H-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
RU30L15H-VB
Transistors RU30L15H-VB
30V 11.6A 11mΩ@10V,10A 5.6W 3V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

30V 11.6A 11mΩ@10V,10A 5.6W 3V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RU30L15H-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1658326 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1658326
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Sot-346 (sc-59)
View Details
- LM5100AM/NOPB - Rochester Electronics
Texas Instruments
LM5100AM/NOPB
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Single FETs, MOSFETs - 448-AIMDQ75R040M2HXTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMDQ75R040M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type 22-PowerBSOP Module
View Details