VBsemi Electronics Co. Ltd. Transistors RFD8P06ESM-VB

Description
60V 30A 61.1mΩ@10V,5A 34W 2V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
  • Transistors - RFD8P06ESM-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
60V 30A 61.1mΩ@10V,5A 34W 2V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
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Transistors - RFD8P06ESM-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
RFD8P06ESM-VB
Transistors RFD8P06ESM-VB
60V 30A 61.1mΩ@10V,5A 34W 2V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

60V 30A 61.1mΩ@10V,5A 34W 2V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RFD8P06ESM-VB
Product Name Transistors
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