VBsemi Electronics Co. Ltd. Transistors QM3100M6-VB

Description
30V 1.8mΩ@10V 2V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - QM3100M6-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 1.8mΩ@10V 2V 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - QM3100M6-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
QM3100M6-VB
Transistors QM3100M6-VB
30V 1.8mΩ@10V 2V 1 N-Channel TO-252 MOSFETs ROHS

30V 1.8mΩ@10V 2V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number QM3100M6-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, 7 Pack Module 1200V, 75A, P622; Continuous Collector Current Fuji Electric - 76R7169 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 7 Pack Module 1200V, 75A, P622; Continuous Collector Current Fuji Electric
7MBP75TEA-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor - TGF2979-SM - Qorvo
Qorvo
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
TGF2979-SM
Specs
Transistor Technology / Material DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
Package Type QFN
Transistor Grade / Operating Range Military
View Details
3 suppliers
CSD25213W10 P-Channel NexFET? Power MOSFET - CSD25213W10 - Texas Instruments
Texas Instruments
CSD25213W10 P-Channel NexFET? Power MOSFET
CSD25213W10
Specs
Transistor Type Power-MOSFET
Polarity P-Channel
Package Type WLP1.0x1.0
View Details
6 suppliers
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details