VBsemi Electronics Co. Ltd. Transistors NTMS10P02R2G-VB

Description
20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS
Request a Quote Datasheet
Description
20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistors NTMS10P02R2G-VB
20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
NTMS10P02R2G-VB
Triode/MOS Tube/Transistor >> MOSFETs NTMS10P02R2G-VB
20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA P Channel SO-8 MOSFETs ROHS

20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA P Channel SO-8 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTMS10P02R2G-VB NTMS10P02R2G-VB
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
VGS(off) 1.2 volts
rDS(on) 0.0150 ohms
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZA75R090M1H - AIMZA75R090M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
CSD17303Q5 30V N Channel NexFET? Power MOSFET - CSD17303Q5 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 0.0026 ohms
View Details
8 suppliers
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair - ALD114904APAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Depletion; Precision Depletion Mode
V(BR)DSS 10 volts
View Details
3 suppliers