VBsemi Electronics Co. Ltd. Transistors NDD60N360U1-VB

Description
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - NDD60N360U1-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - NDD60N360U1-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NDD60N360U1-VB
Transistors NDD60N360U1-VB
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NDD60N360U1-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1223318 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1223318
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT223; Sot-223
View Details
CSD17578Q3A CSD17578Q3A 30 V N-Channel NexFET? Power MOSFET - CSD17578Q3A - Texas Instruments
Texas Instruments
CSD17578Q3A CSD17578Q3A 30 V N-Channel NexFET? Power MOSFET
CSD17578Q3A
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON3x3
View Details
7 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1 - AIMBG120R010M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1
AIMBG120R010M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details