VBsemi Electronics Co. Ltd. Transistors NCE80H11D-VB

Description
80V 6mΩ@10V 3.7V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - NCE80H11D-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
80V 6mΩ@10V 3.7V 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Transistors - NCE80H11D-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE80H11D-VB
Transistors NCE80H11D-VB
80V 6mΩ@10V 3.7V 1 N-Channel TO-263 MOSFETs ROHS

80V 6mΩ@10V 3.7V 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
NCE80H11D-VB
Triode/MOS Tube/Transistor >> MOSFETs NCE80H11D-VB
80V 6mΩ@10V 3.7V N Channel TO-263 MOSFETs ROHS

80V 6mΩ@10V 3.7V N Channel TO-263 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NCE80H11D-VB NCE80H11D-VB
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel
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