VBsemi Electronics Co. Ltd. Transistors ME30N10-G-VB

Description
TO-252 MOSFETs ROHS
  • Transistors - ME30N10-G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - ME30N10-G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
ME30N10-G-VB
Transistors ME30N10-G-VB
TO-252 MOSFETs ROHS

TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number ME30N10-G-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1333320P - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1333320P
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PowerDI3333
View Details
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -40 to 125 - 815-INA159AIDGKRG4 - Utmel Electronic Limited
Texas Instruments
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -40 to 125
INA159AIDGKRG4
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
- 2EDL8033G4BXTMA1 - Rochester Electronics
Infineon Technologies AG
2EDL8033G4BXTMA1
Specs
Transistor Type MOSFET
Package Type PG-VDSON-8
View Details