VBsemi Electronics Co. Ltd. Transistors K3150-VB

Description
100V 40A 30.2mΩ@10V,5A 107W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - K3150-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 40A 30.2mΩ@10V,5A 107W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - K3150-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
K3150-VB
Transistors K3150-VB
100V 40A 30.2mΩ@10V,5A 107W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

100V 40A 30.2mΩ@10V,5A 107W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number K3150-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, Module, Dual N Channel, 3.3Kv, 1.33Ka; Continuous Collector Current Fuji Electric - 54W0205 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 3.3Kv, 1.33Ka; Continuous Collector Current Fuji Electric
1MBI800UG-330
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
- BC807-40W/ZLF - Rochester Electronics
Nexperia B.V.
Single Bipolar Transistors
BC807-40W/ZLF
Specs
Transistor Type Bipolar RF; MOSFET RF
Polarity PNP
Package Type SOT323; SOT-323-3
View Details
3 suppliers
Single FETs, MOSFETs - 448-AIMBG75R007M2HXTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG75R007M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
501609
View Details