VBsemi Electronics Co. Ltd. Transistors IRF510STRL-VB

Description
100V 100mΩ@10V 1.7V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - IRF510STRL-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 100mΩ@10V 1.7V 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - IRF510STRL-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IRF510STRL-VB
Transistors IRF510STRL-VB
100V 100mΩ@10V 1.7V 1 N-Channel TO-263 MOSFETs ROHS

100V 100mΩ@10V 1.7V 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IRF510STRL-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 135813725 - Radwell International
Fuji Electric Corp. of America
Transistor
ET401
View Details
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die - QPD2120D - Qorvo
Qorvo
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
QPD2120D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
- LM5109BMA/NOPB - Rochester Electronics
Texas Instruments
LM5109BMA/NOPB
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
501609
View Details