VBsemi Electronics Co. Ltd. Transistors IPD60N10S4L-12-VB

Description
100V 9mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - IPD60N10S4L-12-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 9mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS
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Transistors - IPD60N10S4L-12-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD60N10S4L-12-VB
Transistors IPD60N10S4L-12-VB
100V 9mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS

100V 9mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPD60N10S4L-12-VB
Product Name Transistors
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