VBsemi Electronics Co. Ltd. Transistors IPD180N10N3G-VB

Description
100V 18mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - IPD180N10N3G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 18mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS
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Transistors - IPD180N10N3G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD180N10N3G-VB
Transistors IPD180N10N3G-VB
100V 18mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS

100V 18mΩ@10V 3.2V 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPD180N10N3G-VB
Product Name Transistors
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