VBsemi Electronics Co. Ltd. Transistors IPB067N08N3 G-VB

Description
80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - IPB067N08N3 G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - IPB067N08N3 G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB067N08N3 G-VB
Transistors IPB067N08N3 G-VB
80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS

80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPB067N08N3 G-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1006B-AZ - 906299-2SA1006B-AZ - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1006B-AZ
2SA1006B-AZ
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
920A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E920
Specs
Transistor Type IGBT
View Details
Mosfet,nn Channel,60V,0.34A,sot666; Transistor Polarity Nexperia - 28T0306 - Newark, An Avnet Company
Nexperia B.V.
Mosfet,nn Channel,60V,0.34A,sot666; Transistor Polarity Nexperia
2N7002BKV
Specs
Transistor Type MOSFET; Mosfet,nn Channel,60V,0.34A,sot666; Transistor Polarity Nexperia
Polarity N-Channel
Package Type TO-3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details