VBsemi Electronics Co. Ltd. Transistors IPB067N08N3 G-VB

Description
80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - IPB067N08N3 G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS

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Transistors - IPB067N08N3 G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB067N08N3 G-VB
Transistors IPB067N08N3 G-VB
80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS

80V 120A 6mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPB067N08N3 G-VB
Product Name Transistors
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