VBsemi Electronics Co. Ltd. Transistors FMV06N60ES-VB

Description
650V 7A 1.1Ω@10V 1 N-Channel TO-220F MOSFETs ROHS
  • Transistors - FMV06N60ES-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
650V 7A 1.1Ω@10V 1 N-Channel TO-220F MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - FMV06N60ES-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FMV06N60ES-VB
Transistors FMV06N60ES-VB
650V 7A 1.1Ω@10V 1 N-Channel TO-220F MOSFETs ROHS

650V 7A 1.1Ω@10V 1 N-Channel TO-220F MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FMV06N60ES-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 104435211 - Radwell International
Fuji Electric Corp. of America
IGBT
7MBR25LE120
Specs
Transistor Type IGBT
View Details
80 V, 1 A NPN medium power transistors - BC56PA-QX - Nexperia B.V.
Nexperia B.V.
80 V, 1 A NPN medium power transistors
BC56PA-QX
Specs
Package Type SOT1061 SOT1061
View Details
3 suppliers
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6851 - 2N6851 - Infineon Technologies AG
Infineon Technologies AG
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6851
2N6851
Specs
Transistor Type MOSFET; Power-MOSFET
Polarity P-Channel; P
Package Type M-TO205-3
View Details
1300A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K3 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1300A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K3
Specs
Transistor Type IGBT
View Details