VBsemi Electronics Co. Ltd. Transistors FDMS8622-VB

Description
100V 18mΩ@10V 4V 1 N-Channel DFN-8(5x6) MOSFETs ROHS
Description
100V 18mΩ@10V 4V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDMS8622-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
FDMS8622-VB
Transistors FDMS8622-VB
100V 18mΩ@10V 4V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

100V 18mΩ@10V 4V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDMS8622-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

80 V, 1 A NPN medium power transistors - BC56-16PAS-QX - Nexperia B.V.
Specs
Package Type SOT1061D SOT1061D
View Details
2 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R120M1T - AIMZH120R120M1T - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details