VBsemi Electronics Co. Ltd. Transistors FDC8878-VB

Description
30V 6A 23mΩ@10V 1 N-Channel TSOP-6 MOSFETs ROHS
Description
30V 6A 23mΩ@10V 1 N-Channel TSOP-6 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDC8878-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
FDC8878-VB
Transistors FDC8878-VB
30V 6A 23mΩ@10V 1 N-Channel TSOP-6 MOSFETs ROHS

30V 6A 23mΩ@10V 1 N-Channel TSOP-6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDC8878-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 21666081 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
2 suppliers
45 V, 1 A NPN medium power transistors - BC54PAS-QX - Nexperia B.V.
Specs
Package Type SOT1061D SOT1061D
View Details
2 suppliers
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details