VBsemi Electronics Co. Ltd. Transistors FDC638P-VB

Description
30V 4.8A 49mΩ@10V,4.8A 1 Piece P-Channel TSOP-6-1.5mm MOSFETs ROHS
  • Transistors - FDC638P-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 4.8A 49mΩ@10V,4.8A 1 Piece P-Channel TSOP-6-1.5mm MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDC638P-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FDC638P-VB
Transistors FDC638P-VB
30V 4.8A 49mΩ@10V,4.8A 1 Piece P-Channel TSOP-6-1.5mm MOSFETs ROHS

30V 4.8A 49mΩ@10V,4.8A 1 Piece P-Channel TSOP-6-1.5mm MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDC638P-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1333320 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1333320
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Powerdi3333
View Details
CSD17573Q5B CSD17573Q5B 30 V, N-Channel NexFET Power MOSFET - CSD17573Q5B - Texas Instruments
Texas Instruments
CSD17573Q5B CSD17573Q5B 30 V, N-Channel NexFET Power MOSFET
CSD17573Q5B
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
7 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R060M2H - AIMDQ75R060M2H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R060M2H
AIMDQ75R060M2H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details