VBsemi Electronics Co. Ltd. Transistors FCP125N60E-VB

Description
600V 25A 120mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
  • Transistors - FCP125N60E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
600V 25A 120mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FCP125N60E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FCP125N60E-VB
Transistors FCP125N60E-VB
600V 25A 120mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

600V 25A 120mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FCP125N60E-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, 7 Pack Module 1200V, 75A, P622; Continuous Collector Current Fuji Electric - 76R7169 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 7 Pack Module 1200V, 75A, P622; Continuous Collector Current Fuji Electric
7MBP75TEA-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
Discrete Semiconductor Products - Transistors - IGBTs - 63-8028 - Acme Chip Technology Co., Limited
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - IGBTs
63-8028
Specs
Transistor Type IGBT
View Details
MOSFETs - 1827101P - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1827101P
Specs
Transistor Type MOSFET
Package Type SOT23; SOT-23
View Details
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die - QPD2060D - Qorvo
Qorvo
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
QPD2060D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers