VBsemi Electronics Co. Ltd. Transistors BSC022N03S G-VB

Description
30V 1.8mΩ@10V 2V 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - BSC022N03S G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 1.8mΩ@10V 2V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - BSC022N03S G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC022N03S G-VB
Transistors BSC022N03S G-VB
30V 1.8mΩ@10V 2V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

30V 1.8mΩ@10V 2V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BSC022N03S G-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistors - 2MBI400VB-060-50 - ODG (Origin Data Global)
Fuji Electric Corp. of America
Transistors
2MBI400VB-060-50
View Details
50 V, 500 mA NPN general-purpose transistor - 2PD602ASL,215 - Nexperia B.V.
Nexperia B.V.
50 V, 500 mA NPN general-purpose transistor
2PD602ASL,215
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
8 suppliers
- 2EDL8033G3CXTMA1 - Rochester Electronics
Infineon Technologies AG
2EDL8033G3CXTMA1
Specs
Transistor Type MOSFET
Package Type PG-VSON-1
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details