VBsemi Electronics Co. Ltd. Transistors AOI8N25-VB

Description
200V 8A 270mΩ@10V 1 N-Channel TO-251 MOSFETs ROHS
Request a Quote
Description
200V 8A 270mΩ@10V 1 N-Channel TO-251 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AOI8N25-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
AOI8N25-VB
Transistors AOI8N25-VB
200V 8A 270mΩ@10V 1 N-Channel TO-251 MOSFETs ROHS

200V 8A 270mΩ@10V 1 N-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AOI8N25-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor - QPD1035L - Qorvo
Specs
Transistor Technology / Material DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
Package Type Flanged
Transistor Grade / Operating Range Military
View Details
2 suppliers
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ZERO THRESHOLD™ MATCHED PAIR - ALD310700APCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type PDIP16
View Details
4 suppliers
Transistor - 32764010 - Radwell International
Fuji Electric Corp. of America
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1610-T2-A - 906305-2SA1610-T2-A - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details