Utmel Electronic Limited 60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS 15960-YJG30N06A

Description
60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS
Description
60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS - 15960-YJG30N06A - Utmel Electronic Limited
Hong Kong, China
60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS
15960-YJG30N06A
60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS 15960-YJG30N06A
60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS

60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 15960-YJG30N06A
Product Name 60V 30A 16mΩ@10V,15A 30W 1.5V@250uA 116pF@30V N Channel 2.027nF@30V 51nC@10V -55℃~+150℃@(Tj) PDFN(5x6) MOSFETs ROHS
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1574619P - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
Package Type E-Line
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910017SAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers
 - LM5051MA/NOPB - Rochester Electronics
Texas Instruments
Specs
Package Type SOIC8
Packing Method Tube; Tube
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H - AIMBG75R020M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details