Semelab Plc. Mosfet,hi-Rel,n Channel,60V,0.17A,to-18; Channel Type Tt Electronics/semelab VN10K

Description
MOSFET,HI-REL,N CHANNEL,60V,0.17A,TO -18; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:170mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
Description
MOSFET,HI-REL,N CHANNEL,60V,0.17A,TO -18; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:170mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The VN10K is an N-channel enhancement mode MOSFET designed for power supply, switching, and driver applications. It is housed in a hermetic TO-18 metal package with dimensions of 5.84 mm height, 5.31 mm body diameter, and a 2.54 mm lead spacing. The device has a drain-source voltage rating of 60 V, a continuous drain current of 0.17 A at 25°C, and a static drain-source on-state resistance of 5 Ω at 10 V gate-source voltage. It features a gate-source threshold voltage range of 0.8 to 2.5 V, an input capacitance of 60 pF, and operates over a junction temperature range of -55°C to +150°C. The thermal resistance from junction to ambient is 400°C/W. The part is hermetically sealed and supports pulsed drain current up to 1.0 A.

Datasheet Summary
Powered by GS/AI

The VN10K is an N-channel enhancement mode MOSFET designed for power supply, switching, and driver applications. It is housed in a hermetic TO-18 metal package with dimensions of 5.84 mm height, 5.31 mm body diameter, and a 2.54 mm lead spacing. The device has a drain-source voltage rating of 60 V, a continuous drain current of 0.17 A at 25°C, and a static drain-source on-state resistance of 5 Ω at 10 V gate-source voltage. It features a gate-source threshold voltage range of 0.8 to 2.5 V, an input capacitance of 60 pF, and operates over a junction temperature range of -55°C to +150°C. The thermal resistance from junction to ambient is 400°C/W. The part is hermetically sealed and supports pulsed drain current up to 1.0 A.

Suppliers

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Mosfet,hi-Rel,n Channel,60V,0.17A,to-18; Channel Type Tt Electronics/semelab - 23T1508 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,hi-Rel,n Channel,60V,0.17A,to-18; Channel Type Tt Electronics/semelab
23T1508
Mosfet,hi-Rel,n Channel,60V,0.17A,to-18; Channel Type Tt Electronics/semelab 23T1508
MOSFET,HI-REL,N CHANNEL,60V,0.17A,TO -18; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:170mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

MOSFET,HI-REL,N CHANNEL,60V,0.17A,TO-18; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:170mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 23T1508
Product Name Mosfet,hi-Rel,n Channel,60V,0.17A,to-18; Channel Type Tt Electronics/semelab
Polarity N-Channel
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