The VN10K is an N-channel enhancement mode MOSFET designed for power supply, switching, and driver applications. It is housed in a hermetic TO-18 metal package with dimensions of 5.84 mm height, 5.31 mm body diameter, and a 2.54 mm lead spacing. The device has a drain-source voltage rating of 60 V, a continuous drain current of 0.17 A at 25°C, and a static drain-source on-state resistance of 5 Ω at 10 V gate-source voltage. It features a gate-source threshold voltage range of 0.8 to 2.5 V, an input capacitance of 60 pF, and operates over a junction temperature range of -55°C to +150°C. The thermal resistance from junction to ambient is 400°C/W. The part is hermetically sealed and supports pulsed drain current up to 1.0 A.
MOSFET,HI-REL,N CHANNEL,60V,0.17A,TO
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 23T1508 |
| Product Name | Mosfet,hi-Rel,n Channel,60V,0.17A,to-18; Channel Type Tt Electronics/semelab |
| Polarity | N-Channel |