The OP508FA is a NPN silicon phototransistor in a flat, black plastic end-looking package with a 60° acceptance half-angle, designed for wide-angle light detection. It is mechanically and spectrally matched to OP168F and OP268F infrared emitters, and mounts on 0.100" (2.54 mm) hole centers. Absolute maximum ratings include a 30 V collector-emitter voltage, 100 mW power dissipation, and operating temperatures from -40°C to +100°C. The device has a typical on-state collector current of 2.70 mA at 5.0 V and 5 mW/cm² illumination. Collector-dark current is rated at 100 nA maximum at 10.0 V.
Photo Transistor; Leaded Process Compatible:Yes RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 01C3591 |
| Product Name | Photo Transistor; Leaded Process Compatible Tt Electronics/optek Technology |
| Transistor Type | Photo Transistor; Leaded Process Compatible Tt Electronics/optek Technology |
