The OP505W is a silicon NPN phototransistor in a blue-tinted T-1 (3mm) epoxy package with a 90° receiving angle and 0.050" [1.27mm] lead spacing, designed for infrared detection in space-limited applications. It has a collector-emitter voltage rating of 30 V, a power dissipation of 100 mW, and operates across a temperature range of -40°C to +100°C. The device is 100% production tested with infrared light and meets RoHS requirements.
Photo Transistor; Leaded Process Compatible:Yes RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 08F3010 |
| Product Name | Photo Transistor; Leaded Process Compatible Tt Electronics/optek Technology |
| Transistor Type | Photo Transistor; Leaded Process Compatible Tt Electronics/optek Technology |
