The IRFM460 is a 500V N-channel HEXFET power MOSFET designed for switching applications such as power supplies, motor control, and inverters. It features a TO-254AA through-hole package with a weight of 9.3 g and a hermetically sealed, electrically isolated case that eliminates the need for external insulation. The device has a maximum continuous drain current of 19 A at 25°C, a RDS(on) of 0.27 Ω at 10 V gate-source voltage, and a maximum power dissipation of 250 W. It supports a junction temperature range of -55°C to 150°C and has a typical junction-to-case thermal resistance of 0.5 °C/W. The MOSFET is rated for single-pulse avalanche energy up to 1200 mJ and meets JEDEC Outline TO-254AA standards. Beryllia is present in the package, requiring careful handling to avoid dust generation.
Power MOSFET Thru Hole Product overview: IRFM460 from TT Electronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFM460 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFM460 |
| Product Name | MOSFET Transistor |
