The IRF9230 is a P-channel power MOSFET designed for switching applications, housed in a hermetically sealed TO-3 metal package with a 200 V drain-source breakdown voltage, a continuous drain current of 6.5 A at 25°C, and a maximum on-state resistance of 0.92 Ω at 10 V gate-source voltage. It has a gate-source voltage rating of ±20 V, a power dissipation of 75 W at 25°C, and a thermal resistance junction-to-case of 1.67 °C/W. The device supports single-pulse avalanche energy up to 66 mJ and operates from -55°C to +150°C. Internal drain inductance is 5.0 nH, and source inductance is 13 nH.
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 Product overview: IRF9230 from TT Electronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9230 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF9230 |
| Product Name | 200V 6.5A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
