The IRF230 is an N-channel enhancement mode MOSFET designed for high-voltage power switching applications. It is packaged in a TO-3 (TO-204AA) case with dimensions of 26.67 mm in height, 16.83 mm in width, and 12.70 mm in lead spacing. The device has a drain-source voltage rating of 200 V, a continuous drain current of 9.0 A at 25°C, and a maximum power dissipation of 75 W. It supports a pulsed drain current of 36 A and a single-pulse avalanche energy of 150 mJ. The gate-source voltage is rated at ±20 V. Thermal resistance from junction to case is 1.67 °C/W, and the operating junction temperature ranges from -55°C to 150°C. The package includes an internal drain inductance of 5.0 nH and source inductance of 12.5 nH.
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 Product overview: IRF230 from TT Electronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF230 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF230 |
| Product Name | 200V 9A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
