Semelab Plc. MOSFET DMD1029-A

DMD1029-A is a metal gate RF silicon FET designed for push-pull applications in VHF/UHF communications from 1 MHz to 400 MHz. It features a maximum power dissipation of 438W, a drain-source breakdown voltage of 70V, and a maximum junction temperature of 200°C. The device has a thermal resistance junction-to-case of 0.4°C/W, a minimum power gain of 16 dB, and a drain efficiency of 60% at 175 MHz. It is packaged in a non-BeO, gold metallized case measuring 15.24 mm by 10.80 mm with a height of 1.52R mm. The part meets ultra-low thermal resistance and low Crss requirements, and is tolerant of load VSWR up to 20:1.