Semelab Plc. MOSFET DMD1009

The DMD1009 is a silicon DMOS RF FET designed for VHF/UHF communications from 1 MHz to 500 MHz, with a maximum power output of 150 W at 28 V. It features a push-pull configuration, a minimum power gain of 12 dB, and a thermal resistance from junction to case of 0.27 °C/W. The device has a drain-source breakdown voltage of 70 V and a maximum operating junction temperature of 200 °C. It is housed in a 15.24 mm × 10.80 mm package with gold metallization and is RoHS compliant. The part is BeO-free and supports simple bias circuits with low Crss.