TT Electronics P Channel Mosfet, -200V, 8A, To-247; Channel Type Tt Electronics/semelab BUZ906P

Description
P CHANNEL MOSFET, -200V, 8A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
Description
P CHANNEL MOSFET, -200V, 8A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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P-channel enhancement mode power MOSFET designed for audio and switching applications, housed in a TO-247 package with dimensions of 15.49 mm by 4.69 mm. It has a drain-source voltage rating of -200 V, a continuous drain current of -8 A, and a total power dissipation of 125 W at 25°C case temperature. The device features an integral protection diode, a thermal resistance junction-to-case of 1.0°C/W, and a maximum operating junction temperature of 150°C. It meets AEC-Q200 and RoHS standards. Dynamic characteristics include an input capacitance of 734 pF, output capacitance of 300 pF, and reverse transfer capacitance of 26 pF at 1 MHz.

Datasheet Summary
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P-channel enhancement mode power MOSFET designed for audio and switching applications, housed in a TO-247 package with dimensions of 15.49 mm by 4.69 mm. It has a drain-source voltage rating of -200 V, a continuous drain current of -8 A, and a total power dissipation of 125 W at 25°C case temperature. The device features an integral protection diode, a thermal resistance junction-to-case of 1.0°C/W, and a maximum operating junction temperature of 150°C. It meets AEC-Q200 and RoHS standards. Dynamic characteristics include an input capacitance of 734 pF, output capacitance of 300 pF, and reverse transfer capacitance of 26 pF at 1 MHz.

Suppliers

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Description
Supplier Links
P Channel Mosfet, -200V, 8A, To-247; Channel Type Tt Electronics/semelab - 96K7209 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -200V, 8A, To-247; Channel Type Tt Electronics/semelab
96K7209
P Channel Mosfet, -200V, 8A, To-247; Channel Type Tt Electronics/semelab 96K7209
P CHANNEL MOSFET, -200V, 8A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -200V, 8A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 96K7209
Product Name P Channel Mosfet, -200V, 8A, To-247; Channel Type Tt Electronics/semelab
Polarity P-Channel
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