P-channel enhancement mode power MOSFET designed for audio and switching applications, housed in a TO-247 package with dimensions of 15.49 mm by 4.69 mm. It has a drain-source voltage rating of -200 V, a continuous drain current of -8 A, and a total power dissipation of 125 W at 25°C case temperature. The device features an integral protection diode, a thermal resistance junction-to-case of 1.0°C/W, and a maximum operating junction temperature of 150°C. It meets AEC-Q200 and RoHS standards. Dynamic characteristics include an input capacitance of 734 pF, output capacitance of 300 pF, and reverse transfer capacitance of 26 pF at 1 MHz.
P CHANNEL MOSFET, -200V, 8A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 96K7209 |
| Product Name | P Channel Mosfet, -200V, 8A, To-247; Channel Type Tt Electronics/semelab |
| Polarity | P-Channel |