BUZ906 is a P-channel MOSFET with a maximum drain-source voltage of -200 V, a continuous drain current of -8 A, and a power dissipation of 125 W, housed in a TO-3 package.
P CHANNEL MOSFET, -200V, -8A, TO-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 24M0853 |
| Product Name | P Channel Mosfet, -200V, -8A, To-3; Channel Type Tt Electronics/semelab |
| Polarity | P-Channel |
