The BUZ905 is a P-channel enhancement mode power MOSFET designed for audio applications and high-speed switching, with a drain-source voltage rating of -160V and a continuous drain current of -8A. It is packaged in a TO-3 case with a thermal resistance junction-to-case of 1.0°C/W and a maximum operating junction temperature of 150°C. The device includes an integral protection diode and meets absolute maximum ratings for gate-source voltage of ±14V. Power dissipation is rated at 125W at 25°C case temperature.
P CHANNEL MOSFET, -160V, 8A, TO-3; Channel Type:P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 18M4640 |
| Product Name | P Channel Mosfet, -160V, 8A, To-3; Channel Type Tt Electronics/semelab |
| Polarity | P-Channel |
