The BUZ901P is an N-channel enhancement mode power MOSFET designed for audio applications, featuring a drain-source voltage rating of 200V and a continuous drain current of 8A. It is packaged in a TO-247 case with a thermal resistance junction-to-case of 1.0°C/W and a maximum operating junction temperature of 150°C. The device includes an integral protection diode and supports high-speed switching. The gate-source voltage is limited to ±14V, and the gate-source cut-off voltage ranges from 0.15V to 1.5V. Power dissipation is rated at 125W at a case temperature of 25°C.
N CHANNEL MOSFET, 200V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 96K7204 |
| Product Name | N Channel Mosfet, 200V, 8A, To-247; Channel Type Tt Electronics/semelab |
| Polarity | N-Channel |