N-channel and P-channel MOSFETs for audio applications, available in TO-3, TO-247, TO-3P, and SOT227 packages. The BUZ901D is an N-channel MOSFET with a maximum drain-source voltage of 200 V, a continuous drain current of 16 A, and a power dissipation of 250 W in a TO-3 package. Complementary pairs such as MAG91X95 are offered in TO-3 (4-pin) with ±200 V and ±8 A ratings.
N CHANNEL MOSFET, 200V, 16A, TO-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 96K7203 |
| Product Name | N Channel Mosfet, 200V, 16A, To-3; Channel Type Tt Electronics/semelab |
| Polarity | N-Channel |