TT Electronics Mosfet, N Channel, 160V, 16A, To-3; Channel Type Tt Electronics/semelab BUZ900D

BUZ900D is an N-channel power MOSFET designed for audio applications and high-speed switching, housed in a TO-3 package with a case size of 51.0 mm × 25.0 mm × 10.90 mm. It has a drain-source voltage rating of 160 V, a continuous drain current of 16 A, and a total power dissipation of 250 W at 25°C case temperature. The thermal resistance from junction to case is 0.5°C/W, and the maximum operating junction temperature is 150°C. The device features an integral protection diode, enhancement mode operation, and a gate-source breakdown voltage of ±14 V. Dynamic characteristics include an input capacitance of 950 pF, output capacitance of 550 pF, and reverse transfer capacitance of 18 pF at 1 MHz. Turn-on and turn-off times are 160 ns and 80 ns respectively under specified test conditions.