TT Electronics N Channel Mosfet, 160V, 8A, To-3; Channel Type Tt Electronics/semelab BUZ900

The BUZ900 is an N-channel enhancement mode power MOSFET designed for high-speed switching in audio applications. It is housed in a TO-3 package with a maximum power dissipation of 125W at a case temperature of 25°C. The device has a drain-source voltage rating of 160V and a continuous drain current of 8A, with an integral protection diode. The thermal resistance from junction to case is 1°C/W, and the maximum operating junction temperature is 150°C. The gate-source voltage is limited to ±14V, and the drain-source saturation voltage is 12V at a drain current of 8A. The input, output, and reverse transfer capacitances are 500pF, 300pF, and 10pF respectively at 1MHz and VDS=10V. Turn-on and turn-off times are 100ns and 50ns respectively with a drain current of 5A.