The BUV20 is an NPN multi-epitaxial power transistor designed for high-current switching applications in industrial equipment. It is packaged in a TO-3 case with pins for base, emitter, and collector, where the case serves as the collector terminal. The device has a collector-emitter voltage rating of 125V, a continuous collector current of 50A, and a total power dissipation of 250W at 25°C case temperature. The junction temperature maximum is 200°C, with a thermal resistance from junction to case of 0.7°C/W. Electrical characteristics include a collector-emitter saturation voltage of up to 1.2V at 50A collector current and 5A base current, and a current gain (hFE) ranging from 10 to 60 depending on operating conditions. The transition frequency is 8MHz at 2A collector current and 15V collector-emitter voltage. Storage and operating temperatures range from -65°C to 200°C.
Trans GP BJT NPN 125V 50A 250000mW 3-Pin(2+Tab) TO-3 Product overview: BUV20 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125V, 50A, 250000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 125V, 50A, 250000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BUV20 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-BUV20 |
| Product Name | 125V 50A 250000mW Bipolar Transistor |
| IC(max) | 50000 milliamps |
