Semelab Plc. Bipolar Transistors - BJT BSS76

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Bipolar Transistors - BJT TT Electronics
Description
Bipolar Transistors - BJT TT Electronics
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The BSS76 is a PNP silicon transistor in a TO-18 (TO-206AA) metal package, designed for high-voltage switching applications. It has a collector-base and collector-emitter voltage rating of -300 V, a continuous collector current of -0.5 A, and a total device dissipation of 0.5 W at 25°C. The device features a hermetic metal package and operates over a junction and storage temperature range of -65°C to 200°C. Current gain (hFE) ranges from 35 to 150, with a current gain bandwidth product of 50 to 200 MHz. Thermal resistance from junction to case is 70°C/W. The transistor meets screening options per BS, CECC, and JAN specifications.

Datasheet Summary
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The BSS76 is a PNP silicon transistor in a TO-18 (TO-206AA) metal package, designed for high-voltage switching applications. It has a collector-base and collector-emitter voltage rating of -300 V, a continuous collector current of -0.5 A, and a total device dissipation of 0.5 W at 25°C. The device features a hermetic metal package and operates over a junction and storage temperature range of -65°C to 200°C. Current gain (hFE) ranges from 35 to 150, with a current gain bandwidth product of 50 to 200 MHz. Thermal resistance from junction to case is 70°C/W. The transistor meets screening options per BS, CECC, and JAN specifications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BSS76
Bipolar Transistors - BJT BSS76
Bipolar Transistors - BJT TT Electronics

Bipolar Transistors - BJT TT Electronics

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BSS76
Product Name Bipolar Transistors - BJT
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